Micron 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V ECC Registered 288-pin RDIMM RAM Module Classification_ram-ddr4-2133-udimm-8gb-1x-dr M393B2G70BH0-CK0 Capacity 16GB (1x 16GB)

M393B2G70BH0-CK0 Capacity 16GB (1x 16GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

M470T6554CZ3-CCC Capacity 512MB (1x 512MB) Brand Samsung Speed DDR2-400 - 400MT/s - PC2-3200 Voltage 1

HMT41GS6BFR8A-PB Capacity 8GB (1x 8GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

this means you can upgrade to Fujitsu brand memory without voiding your system’s original warranty

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 16-chip 256M x8 Pieces in Kit 1 Compatibility

Micron 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V ECC Registered 288-pin RDIMM RAM Module Classification_ram-ddr4-2133-udimm-8gb-1x-dr M393B2G70BH0-CK0 Capacity 16GB (1x 16GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2666 MT s 288 pin RDIMM RAM module from Micron . This RAM module is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL19, and is designed